Silicon-induced oriented ZnS nanobelts for hydrogen sensitivity-Reference-Cited by-同舟云学术

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Silicon-induced oriented ZnS nanobelts for hydrogen sensitivity

Published:2008-01-14 Issue:5 Volume:19 Page:055710
ISSN:0957-4484
Container-title:Nanotechnology
language:
Short-container-title:Nanotechnology

Author:

Chen Zhi-Gang,Zou Jin,Liu Gang,Lu Hao Feng,Li Feng,Lu Gao Qing,Cheng Hui Ming

Publisher

IOP Publishing

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,General Materials Science,General Chemistry,Bioengineering

Link

http://stacks.iop.org/0957-4484/19/i=5/a=055710/pdf

Reference30 articles.

1. Controlled growth and electrical properties of heterojunctions of carbon nanotubes and silicon nanowires

2. Functional Nanoscale Electronic Devices Assembled Using Silicon Nanowire Building Blocks

3. The structure, device physics, and material properties of thin film electroluminescent displays

4. Attempts of Homo p-n Junction Formation in ZnS by Impurity Co-Doping with Vapor Phase Epitaxy

5. Study of the growth of ZnS nanoparticles in water/AOT/n-heptane microemulsions by UV-absorption spectroscopy

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