Fabrication of InGaN/GaN nanorod light-emitting diodes with self-assembled Ni metal islands-Reference-Cited by-同舟云学术

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Fabrication of InGaN/GaN nanorod light-emitting diodes with self-assembled Ni metal islands

Published:2007-10-09 Issue:44 Volume:18 Page:445201
ISSN:0957-4484
Container-title:Nanotechnology
language:
Short-container-title:Nanotechnology

Author:

Chiu C H,Lu T C,Huang H W,Lai C F,Kao C C,Chu J T,Yu C C,Kuo H C,Wang S C,Lin C F,Hsueh T H

Publisher

IOP Publishing

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,General Materials Science,General Chemistry,Bioengineering

Link

http://stacks.iop.org/0957-4484/18/i=44/a=445201/pdf

Reference12 articles.

1. InGaN-Based Multi-Quantum-Well-Structure Laser Diodes

2. Characterization of InGaN/GaN Multiple Quantum Well Nanorods Fabricated by Plasma Etching with Self-Assembled Nickel Metal Nanomasks

3. InGaN/GaN Multiple Quantum Disk Nanocolumn Light-Emitting Diodes Grown on (111) Si Substrate

4. Growth and characterization of single-crystal GaN nanorods by hydride vapor phase epitaxy

5. Synthesis of Gallium Nitride Nanorods Through a Carbon Nanotube-Confined Reaction

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