Influence of substrate nitridation temperature on epitaxial alignment of GaN nanowires to Si(111) substrate-Reference-Cited by-同舟云学术

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Influence of substrate nitridation temperature on epitaxial alignment of GaN nanowires to Si(111) substrate

Published:2012-12-21 Issue:3 Volume:24 Page:035703
ISSN:0957-4484
Container-title:Nanotechnology
language:
Short-container-title:Nanotechnology

Author:

Wierzbicka A,Zytkiewicz Z R,Kret S,Borysiuk J,Dluzewski P,Sobanska M,Klosek K,Reszka A,Tchutchulashvili G,Cabaj A,Lusakowska E

Publisher

IOP Publishing

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,General Materials Science,General Chemistry,Bioengineering

Link

http://stacks.iop.org/0957-4484/24/i=3/a=035703/pdf

Reference47 articles.

1. GaN based nanorods for solid state lighting

2. InGaN/GaN Multiple Quantum Disk Nanocolumn Light-Emitting Diodes Grown on (111) Si Substrate

3. GaN-based nanowires: From nanometric-scale characterization to light emitting diodes

4. InGaN/GaN nanorod array white light-emitting diode

5. Multicolour luminescence from InGaN quantum wells grown over GaN nanowire arrays by molecular-beam epitaxy

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