Highly sensitive visible to infrared MoTe2photodetectors enhanced by the photogating effect-Reference-Cited by-同舟云学术

Highly sensitive visible to infrared MoTe2photodetectors enhanced by the photogating effect

Published:2016-09-27 Issue:44 Volume:27 Page:445201
ISSN:0957-4484
Container-title:Nanotechnology
language:
Short-container-title:Nanotechnology

Author:

Huang Hai,Wang Jianlu,Hu Weida,Liao Lei,Wang Peng,Wang Xudong,Gong Fan,Chen Yan,Wu Guangjian,Luo Wenjin,Shen Hong,Lin Tie,Sun Jinglan,Meng Xiangjian,Chen Xiaoshuang,Chu Junhao

Funder

National Natural Science Foundation of China

Publisher

IOP Publishing

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,General Materials Science,General Chemistry,Bioengineering

Link

http://stacks.iop.org/0957-4484/27/i=44/a=445201/pdf

Reference48 articles.

1. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides

2. Electroluminescence in Single Layer MoS2

3. High Performance Multilayer MoS2 Transistors with Scandium Contacts

4. Polarization-sensitive broadband photodetector using a black phosphorus vertical p–n junction

5. Ultrasensitive and Broadband MoS2Photodetector Driven by Ferroelectrics

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