Electrical characterization of single GaN nanowires-Reference-Cited by-同舟云学术

Electrical characterization of single GaN nanowires

Published:2005-10-25 Issue:12 Volume:16 Page:2941-2953
ISSN:0957-4484
Container-title:Nanotechnology
language:
Short-container-title:Nanotechnology

Author:

Stern E,Cheng G,Cimpoiasu E,Klie R,Guthrie S,Klemic J,Kretzschmar I,Steinlauf E,Turner-Evans D,Broomfield E,Hyland J,Koudelka R,Boone T,Young M,Sanders A,Munden R,Lee T,Routenberg D,Reed M A

Publisher

IOP Publishing

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,General Materials Science,General Chemistry,Bioengineering

Link

http://stacks.iop.org/0957-4484/16/i=12/a=037/pdf

Reference18 articles.

1. Growth and optical properties of nanometer‐scale GaAs and InAs whiskers

2. One-dimensional heterostructures in semiconductor nanowhiskers

3. Nanowire resonant tunneling diodes

4. Growth of nanowire superlattice structures for nanoscale photonics and electronics

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