Nanoscale electroluminescence from n-type GaAs(110) in tunnel junctions-Reference-Cited by-同舟云学术

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Nanoscale electroluminescence from n-type GaAs(110) in tunnel junctions

Published:2007-04-17 Issue:19 Volume:18 Page:195201
ISSN:0957-4484
Container-title:Nanotechnology
language:
Short-container-title:Nanotechnology

Author:

Guo X L,Fujita D,Niori N,Keisuke S,Onishi K

Publisher

IOP Publishing

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,General Materials Science,General Chemistry,Bioengineering

Link

http://stacks.iop.org/0957-4484/18/i=19/a=195201/pdf

Reference29 articles.

1. Light emission induced by tunneling electrons from surface nanostructures observed by novel conductive and transparent probes

2. Electromagnetic interactions of metallic objects in nanometer proximity

3. Atomic Resolution in Photon Emission Induced by a Scanning Tunneling Microscope

4. Scanning Tunneling Microscope Light Emission Spectra ofAu(110)−(2×1)with Atomic Spatial Resolution

5. Photon Emission fromSi(111)-(7×7)Induced by Scanning Tunneling Microscopy: Atomic Scale and Material Contrast

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Atomic-Scale Imaging and Spectroscopy of Electroluminescence at Molecular Interfaces;Chemical Reviews;2017-03-15

2. Plasmon-mediated circularly polarized luminescence of GaAs in a scanning tunneling microscope;Applied Physics Letters;2015-12-14

3. Atomic-scale luminescence measurement and theoretical analysis unveiling electron energy dissipation at ap-type GaAs(110) surface;Nanotechnology;2015-08-21

4. Electroluminescence from ${Er}^{3 +}$ incorporated into silicon oxide thin film on silicon in a scanning tunneling microscope;Journal of Nanophotonics;2012-03-05

5. Atomic resolution in tunneling induced light emission from GaAs(110);Applied Physics Letters;2010-04-12

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