Diameter dependence of the void formation in the oxidation of nickel nanowires
Author:
Publisher
IOP Publishing
Subject
Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,General Materials Science,General Chemistry,Bioengineering
Link
http://stacks.iop.org/0957-4484/22/i=23/a=235606/pdf
Reference17 articles.
1. Mechanistic Study on the Replacement Reaction between Silver Nanostructures and Chloroauric Acid in Aqueous Medium
2. Initial Studies on the Hydrogen Gas Sensing Properties of Highly-Ordered High Aspect Ratio TiO2 Nanotube-Arrays 20 μm to 222 μm in Length
3. Fabrication of Hollow Palladium Spheres and Their Successful Application to the Recyclable Heterogeneous Catalyst for Suzuki Coupling Reactions
4. Hollow nanostructures based on the Kirkendall effect: Design and stability considerations
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