Evolution and characteristics of GaN nanowires produced via maskless reactive ion etching-Reference-Cited by-同舟云学术

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Evolution and characteristics of GaN nanowires produced via maskless reactive ion etching

Published:2014-06-04 Issue:25 Volume:25 Page:255301
ISSN:0957-4484
Container-title:Nanotechnology
language:
Short-container-title:Nanotechnology

Author:

Haab Anna,Mikulics Martin,Sutter Eli,Jin Jiehong,Stoica Toma,Kardynal Beata,Rieger Torsten,Grützmacher Detlev,Hardtdegen Hilde

Publisher

IOP Publishing

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,General Materials Science,General Chemistry,Bioengineering

Link

http://stacks.iop.org/0957-4484/25/i=25/a=255301/pdf

Reference41 articles.

1. Gallium nitride based materials and their application for light emitting devices

2. Observation of positive thermal power coefficient in InGaN/GaN quantum well solar cells

3. Semiconductor strained layers

4. On the origin of threading dislocations in GaN films

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1. Luminescence Characteristics of the MOCVD GaN Structures with Chemically Etched Surfaces;Materials;2023-04-27

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4. High performance conical nanostructured GaN-based photodetectors;Journal of Physics D: Applied Physics;2021-10-18

5. In(Ga)N Nanostructures and Devices Grown by Molecular Beam Epitaxy and Metal-Assisted Photochemical Etching;Nanomaterials;2021-01-07

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