Effect of germanium concentration and oxide diffusion barrier on the formation and distribution of germanium nanocrystals in silicon oxide matrix-Reference-Cited by-同舟云学术

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Effect of germanium concentration and oxide diffusion barrier on the formation and distribution of germanium nanocrystals in silicon oxide matrix

Published:2006-03-15 Issue:8 Volume:17 Page:1964-1968
ISSN:0957-4484
Container-title:Nanotechnology
language:
Short-container-title:Nanotechnology

Author:

Chew H G,Choi W K,Foo Y L,Zheng F,Chim W K,Voon Z J,Seow K C,Fitzgerald E A,Lai D M Y

Publisher

IOP Publishing

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,General Materials Science,General Chemistry,Bioengineering

Link

http://stacks.iop.org/0957-4484/17/i=8/a=028/pdf

Reference15 articles.

1. Light Emission from Silicon

2. Blue luminescence in films containing Ge and GeO2 nanocrystals: The role of defects

3. Clarifying the origin of near-infrared electroluminescence peaksfor nanocrystalline germanium in metal-insulator-silicon structures

4. A silicon nanocrystals based memory

5. Charge-trap memory device fabricated by oxidation of Si/sub 1-x/Ge/sub x/

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1. Optimizing SiGe–SiO₂ Visible–Short‐Wave Infrared Photoresponse by Modulating Interplay Between Strain and Defects Through Annealing;Advanced Photonics Research;2024-06-19

2. Photoluminescence study of Si1-xGex nanoparticles in various oxide matrices;2021 International Semiconductor Conference (CAS);2021-10-06

3. Fabrication and characterization of Si1−xGex nanocrystals in as-grown and annealed structures: a comparative study;Beilstein Journal of Nanotechnology;2019-09-17

4. In Situ Formation of Ge Nanoparticles by Annealing of Al-Ge-N Thin Films Followed by HAXPES and XRD;Inorganic Chemistry;2019-08-05

5. Efficacy of annealing and fabrication parameters on photo-response of SiGe in TiO2 matrix;Nanotechnology;2019-06-24

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