Ballistic nanodevices for terahertz data processing: Monte Carlo simulations-Reference-Cited by-同舟云学术

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Ballistic nanodevices for terahertz data processing: Monte Carlo simulations

Published:2003-01-10 Issue:2 Volume:14 Page:117-122
ISSN:0957-4484
Container-title:Nanotechnology
language:
Short-container-title:Nanotechnology

Author:

Mateos J,Vasallo B G,Pardo D,Gonz lez T,Galloo J S,Roelens Y,Bollaert S,Cappy A

Publisher

IOP Publishing

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,General Materials Science,General Chemistry,Bioengineering

Link

http://stacks.iop.org/0957-4484/14/i=2/a=303/pdf

Reference6 articles.

1. Nonlinear operation of GaInAs/InP-based three-terminal ballistic junctions

2. Improved Monte Carlo algorithm for the simulation of δ-doped AlInAs/GaInAs HEMTs

3. Effect of the T-gate on the performance of recessed HEMTs. A Monte Carlo analysis

4. Monte Carlo simulator for the design optimization of low-noise HEMTs

5. Effect of long-range Coulomb interaction on shot-noise suppression in ballistic transport

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2. Analysis of nonlinear characteristics of a graphene based four-terminal ballistic rectifier using a drift-diffusion model;Nanoscale Advances;2019

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5. Positive centre voltage in T-branch junctions on n-type GaAs/AlGaAs based on hydrodynamics;Semiconductor Science and Technology;2017-09-01

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