Technology computer-aided design modelling of single-atom doping for fabrication of buried nanostructures

Author:

Pakes C I,George D P,Jamieson D N,Yang C J,Dzurak A S,Gauja E,Clark R G

Publisher

IOP Publishing

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,General Materials Science,General Chemistry,Bioengineering

Cited by 12 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Defect behavior in oxides: Insights from modern atomistic simulation methods;Current Opinion in Solid State and Materials Science;2013-12

2. Single-Ion Implantation for Quantum Computing;Single-Atom Nanoelectronics;2013-04-17

3. Investigation of avalanche silicon detectors for low energy single ion implantation applications;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2010-06

4. Adsorption of molecular oxygen on doped graphene: Atomic, electronic, and magnetic properties;Physical Review B;2010-04-08

5. Formation, Dynamics, and Characterization of Nanostructures by Ion Beam Irradiation;Critical Reviews in Solid State and Materials Sciences;2007-05-17

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