The evolution of the fraction of Er ions sensitized by Si nanostructures in silicon-rich silicon oxide thin films-Reference-Cited by-同舟云学术

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The evolution of the fraction of Er ions sensitized by Si nanostructures in silicon-rich silicon oxide thin films

Published:2009-08-12 Issue:35 Volume:20 Page:355704
ISSN:0957-4484
Container-title:Nanotechnology
language:
Short-container-title:Nanotechnology

Author:

Noé P,Okuno H,Jager J-B,Delamadeleine E,Demichel O,Rouvière J-L,Calvo V,Maurizio C,D’Acapito F

Publisher

IOP Publishing

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,General Materials Science,General Chemistry,Bioengineering

Link

http://stacks.iop.org/0957-4484/20/i=35/a=355704/pdf

Reference31 articles.

1. Structure of Er-O complexes in crystalline Si

2. Optical properties of PECVD erbium-doped silicon-rich silica: evidence for energy transfer between silicon microclusters and erbium ions

3. Luminescence-center-mediated excitation as the dominant Er sensitization mechanism in Er-doped silicon-richSiO2films

4. Modeling and perspectives of the Si nanocrystals–Er interaction for optical amplification

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Nanoscale evidence of erbium clustering in Er-doped silicon-rich silica;Nanoscale Research Letters;2013-01-21

2. Implantation damage effects on the Er3+luminescence in silica;Optics Express;2012-07-09

3. Realization of sensitized erbium luminescence in Si–nanocrystal composites obtained from solution processable sol–gel derived materials;J. Mater. Chem.;2011

4. Investigation of emitting centers in SiO2 codoped with silicon nanoclusters and Er3+ ions by cathodoluminescence technique;Journal of Applied Physics;2010-12

5. Determination of optimum Si excess concentration in Er-doped Si-rich SiO2 for optical amplification at 1.54 μm;Applied Physics Letters;2010-11-15

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