High-performance nonvolatile Al/AlOx/CdTe:Sb nanowire memory device-Reference-Cited by-同舟云学术

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High-performance nonvolatile Al/AlOx/CdTe:Sb nanowire memory device

Published:2013-08-07 Issue:35 Volume:24 Page:355203
ISSN:0957-4484
Container-title:Nanotechnology
language:
Short-container-title:Nanotechnology

Author:

Xie Chao,Nie Biao,Zhu Long,Zeng Long-Hui,Yu Yong-Qiang,Wang Xian-He,Fang Qun-Ling,Luo Lin-Bao,Wu Yu-Cheng

Publisher

IOP Publishing

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,General Materials Science,General Chemistry,Bioengineering

Link

http://stacks.iop.org/0957-4484/24/i=35/a=355203/pdf

Reference37 articles.

1. One-dimensional II–VI nanostructures: Synthesis, properties and optoelectronic applications

2. Vertically aligned wurtzite CdTe nanowires derived from a catalytically driven growth mode

3. Energy-Conversion Properties of Vapor-Liquid-Solid–Grown Silicon Wire-Array Photocathodes

4. Monolayer graphene film/silicon nanowire array Schottky junction solar cells

5. Photovoltaic solar cells: An overview of state-of-the-art cell development and environmental issues

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1. Transition of short-term to long-term memory of Cu/TaOx/CNT conductive bridge random access memory for neuromorphic engineering;Carbon;2023-11

2. Uniform resistive switching and highly stable synaptic characteristics of HfOx sandwiched TaOx-based memristor for neuromorphic system;Ceramics International;2023-06

3. Promising Materials and Synthesis Methods for Resistive Switching Memory Devices: A Status Review;ACS Applied Electronic Materials;2023-04-21

4. Recent Advances in Flexible Resistive Random Access Memory;Applied System Innovation;2022-09-21

5. Ubiquitous memristors on-chip in multi-level memory, in-memory computing, data converters, clock generation and signal transmission;Metal Oxides for Non-volatile Memory;2022

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