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Prospects for terabit-scale nanoelectronic memories

  • Published:2004-12-11 Issue:1 Volume:16 Page:137-148
  • ISSN:0957-4484
  • Container-title:Nanotechnology
  • language:
  • Short-container-title:Nanotechnology

Author:

Strukov Dmitri B,Likharev Konstantin K

Publisher

IOP Publishing

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,General Materials Science,General Chemistry,Bioengineering

Cited by 67 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Resistive switching memory for high density storage and computing*;Chinese Physics B;2021-05-01

2. Atomic-scale structural evolution and welding deformations of laser welded joints in Ag nanowire connectors on homogeneous substrates;Japanese Journal of Applied Physics;2020-10-23

3. Asymmetry Switching Behavior of the Binary Memristor;IETE Journal of Research;2019-09-26

4. A Novel March C2RR Algorithm for Nanoelectronic Resistive Random Access Memory (RRAM) Testing;Communications in Computer and Information Science;2019

5. Selective Sensitization of Useless Sneak-Paths for Test Optimization in Memristor-Arrays;2019 32nd International Conference on VLSI Design and 2019 18th International Conference on Embedded Systems (VLSID);2019-01
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