Modulation of the photoluminescence spectrum by depth selective excitation of an embedded Si-nc layer-Reference-Cited by-同舟云学术

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Modulation of the photoluminescence spectrum by depth selective excitation of an embedded Si-nc layer

Published:2004-12-01 Issue:1 Volume:16 Page:32-36
ISSN:0957-4484
Container-title:Nanotechnology
language:
Short-container-title:Nanotechnology

Author:

Smirani R,Martin F,Abel G,Wang Y Q,Ross G G

Publisher

IOP Publishing

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,General Materials Science,General Chemistry,Bioengineering

Link

http://stacks.iop.org/0957-4484/16/i=1/a=008/pdf

Reference30 articles.

1. Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers

2. The structural and luminescence properties of porous silicon

3. Porous silicon formation: A quantum wire effect

4. Electroluminescence studies in silicon dioxide films containing tiny silicon islands

5. Photoluminescence of Si-Rich SiO2Films: Si Clusters as Luminescent Centers

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1. Influence of implantation parameters on the depth distribution of emitting Si-nc;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2012-02

2. Germanium Dioxide Nanocubes with Different Size Distributions and Its Gibbs Free Energy Theory;Materials Science Forum;2011-06

3. Optical Properties of Femtosecond Laser-Synthesized Silicon Nanoparticles in Deionized Water;The Journal of Physical Chemistry C;2011-02-08

4. (Invited) Synthesis and Characterization of Group IV Nanocrystals;ECS Transactions;2010-04-16

5. Optical index profile of nonuniform depth-distributed silicon nanocrystals within SiO2;Journal of Applied Physics;2009-01

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