Exciton pumping across type-I gallium chalcogenide heterojunctions-Reference-Cited by-同舟云学术

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Exciton pumping across type-I gallium chalcogenide heterojunctions

Published:2016-01-13 Issue:6 Volume:27 Page:065203
ISSN:0957-4484
Container-title:Nanotechnology
language:
Short-container-title:Nanotechnology

Author:

Cai Hui,Kang Jun,Sahin Hasan,Chen Bin,Suslu Aslihan,Wu Kedi,Peeters Francois,Meng Xiuqing,Tongay Sefaattin

Funder

Arizona State University seeding program

Flemish Science Foundation

Methusalem foundation of the Flemish government

FWO Pegasus Long Marie Curie Fellowship

FWO Pegasus-short Marie Curie Fellowship

Publisher

IOP Publishing

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,General Materials Science,General Chemistry,Bioengineering

Reference37 articles.

1. Nitride-based semiconductors for blue and green light-emitting devices

2. Direct Growth of Highly Mismatched Type II ZnO/ZnSe Core/Shell Nanowire Arrays on Transparent Conducting Oxide Substrates for Solar Cell Applications

3. A New Field-Effect Transistor with Selectively Doped GaAs/n-AlxGa1-xAs Heterojunctions

4. Two-dimensional atomic crystals

5. Atomically ThinMoS2: A New Direct-Gap Semiconductor

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