Lateral conduction quantum dot infrared photodetectors using photoionization of holes in InAs quantum dots
Author:
Publisher
IOP Publishing
Subject
Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,General Materials Science,General Chemistry,Bioengineering
Link
http://stacks.iop.org/0957-4484/17/i=15/a=042/pdf
Reference18 articles.
1. Quantum‐well infrared photodetectors
2. Mid-infrared photoconductivity in InAs quantum dots
3. Far-infrared photoconductivity in self-organized InAs quantum dots
4. Normal-incidence intersubband (In, Ga)As/GaAs quantum dot infrared photodetectors
5. Intersublevel transitions in InAs/GaAs quantum dots infrared photodetectors
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1. Investigation of p-type multicolour-broadband quantum dot infrared photodetector;Superlattices and Microstructures;2015-06
2. Theoretical Analysis of Resonant Cavity p-Type Quantum Dot Infrared Photodetector;IEEE Journal of Quantum Electronics;2013-10
3. Quantum dot photodetectors based on structures with collective potential barriers;SPIE Proceedings;2010-01-23
4. Monte-Carlo Modeling of Electron Kinetics in Room Temperature Quantum-Dot Photodetectors;Large-Scale Scientific Computing;2010
5. Effect of Rapid Thermal Annealing on the Electrical Properties of GaAs Schottky Diodes Embedded with Self-Assembled InAs Quantum Dots;Journal of Nanoscience and Nanotechnology;2008-10-01
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