Enhancement of photoluminescence intensity of erbium doped silica containing Ge nanocrystals: distance dependent interactions-Reference-Cited by-同舟云学术

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Enhancement of photoluminescence intensity of erbium doped silica containing Ge nanocrystals: distance dependent interactions

Published:2015-01-06 Issue:4 Volume:26 Page:045202
ISSN:0957-4484
Container-title:Nanotechnology
language:
Short-container-title:Nanotechnology

Author:

Manna S,Aluguri R,Bar R,Das S,Prtljaga N,Pavesi L,Ray S K

Funder

DST-ITPAR project on Nanophotonics

Publisher

IOP Publishing

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,General Materials Science,General Chemistry,Bioengineering

Link

http://stacks.iop.org/0957-4484/26/i=4/a=045202/pdf

Reference32 articles.

1. Erbium implanted thin film photonic materials

2. Optical properties of PECVD erbium-doped silicon-rich silica: evidence for energy transfer between silicon microclusters and erbium ions

3. Excitable Er fraction and quenching phenomena in Er-dopedSiO2layers containing Si nanoclusters

4. 1.54 μm photoluminescence of Er3+ doped into SiO2 films containing Si nanocrystals: Evidence for energy transfer from Si nanocrystals to Er3+

5. Strong exciton-erbium coupling in Si nanocrystal-doped SiO2

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2. Size-Dependent Photoresponse of Germanium Nanocrystals-Metal Oxide Semiconductor Photodetector;IEEE Transactions on Electron Devices;2020-02

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4. Magnetism, stability and electronic properties of a novel one-dimensional infinite monatomic copper wire: a density functional study;New Journal of Chemistry;2019

5. Detailed investigation of defect states in Erbium doped In2O3 thin films;Materials Research Bulletin;2018-03

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