Reducing the contact resistance of SiNW devices by employing a heavily doped carrier injection layer-Reference-Cited by-同舟云学术

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Reducing the contact resistance of SiNW devices by employing a heavily doped carrier injection layer

Published:2012-07-02 Issue:30 Volume:23 Page:305701
ISSN:0957-4484
Container-title:Nanotechnology
language:
Short-container-title:Nanotechnology

Author:

Liu Donghua,Shi Zhiwen,Zhang Lianchang,He Congli,Zhang Jing,Cheng Meng,Yang Rong,Tian Xuezeng,Bai Xuedong,Shi Dongxia,Zhang Guangyu

Publisher

IOP Publishing

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,General Materials Science,General Chemistry,Bioengineering

Link

http://stacks.iop.org/0957-4484/23/i=30/a=305701/pdf

Reference27 articles.

1. Functional Nanoscale Electronic Devices Assembled Using Silicon Nanowire Building Blocks

2. Flexible, Polymer-Supported, Si Wire Array Photoelectrodes

3. Encoding Electronic Properties by Synthesis of Axial Modulation-Doped Silicon Nanowires

4. Coaxial silicon nanowires as solar cells and nanoelectronic power sources

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Performance improvement of planar silicon nanowire field effect transistors via catalyst atom doping control;Journal of Alloys and Compounds;2024-10

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