InGaN quantum dot formation mechanism on hexagonal GaN/InGaN/GaN pyramids-Reference-Cited by-同舟云学术

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InGaN quantum dot formation mechanism on hexagonal GaN/InGaN/GaN pyramids

Published:2012-07-11 Issue:30 Volume:23 Page:305708
ISSN:0957-4484
Container-title:Nanotechnology
language:
Short-container-title:Nanotechnology

Author:

Lundskog A,Palisaitis J,Hsu C W,Eriksson M,Karlsson K F,Hultman L,Persson P O Å,Forsberg U,Holtz P O,Janzén E

Publisher

IOP Publishing

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,General Materials Science,General Chemistry,Bioengineering

Link

http://stacks.iop.org/0957-4484/23/i=30/a=305708/pdf

Reference29 articles.

1. Spontaneous ordering of nanostructures on crystal surfaces

2. Quantum dot infrared photodetectors: Interdot coupling

3. Single-photon emitters based on semiconductor nanostructures

4. Triggered Single Photons from a Quantum Dot

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1. Highly Uniform Array of Hexagonally Symmetric Micro‐Pyramid Structures for Scalable and Single Quantum Dot Emitters;Advanced Materials Interfaces;2023-02

2. GaN-based pyramidal quantum structures for micro-size light-emitting diode applications;Applied Physics Letters;2021-04-05

3. Atomistic modeling of InGaN/GaN quantum dots-in-nanowire for graded surface-emitting low-threshold, blue exciton laser;Results in Physics;2021-01

4. Efficient light extraction from an apex quantum dot coupled to a single-mode optical fiber;Optical Materials Express;2020-11-09

5. Fiber-based unidirectional emission with enhanced extraction efficiency of a single quantum dot from an optimized structure;Optics Communications;2020-01

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