Polaron-induced lattice distortion of (In,Ga)As/GaAs quantum dots by optically excited carriers-Reference-Cited by-同舟云学术

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Polaron-induced lattice distortion of (In,Ga)As/GaAs quantum dots by optically excited carriers

Published:2016-09-13 Issue:42 Volume:27 Page:425702
ISSN:0957-4484
Container-title:Nanotechnology
language:
Short-container-title:Nanotechnology

Author:

Tiemeyer S,Bombeck M,Göhring H,Paulus M,Sternemann C,Nase J,Wirkert F J,Möller J,Büning T,Seeck O H,Reuter D,Wieck A D,Bayer M,Tolan M

Publisher

IOP Publishing

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,General Materials Science,General Chemistry,Bioengineering

Link

http://stacks.iop.org/0957-4484/27/i=42/a=425702/pdf

Reference32 articles.

1. Single Semiconductor Quantum Dots

2. Quantum Dot Devices

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Revealing intrinsic lattice expansion and grain boundary excess volume of nanocrystalline Se prepared via various methods;Materialia;2020-03

2. Metamorphic InAs/InGaAs Quantum Dot Structures: Photoelectric Properties and Deep Levels;Springer Proceedings in Physics;2020

3. Defect influence on in-plane photocurrent of InAs/InGaAs quantum dot array: long-term electron trapping and Coulomb screening;Nanotechnology;2019-05-03

4. Complete characterization of GaAs gradient-elastic tensors and reconstruction of internal strain in GaAs/AlGaAs quantum dots using nuclear magnetic resonance;Physical Review B;2019-03-20

5. Cross calibration of deformation potentials and gradient-elastic tensors of GaAs using photoluminescence and nuclear magnetic resonance spectroscopy in GaAs/AlGaAs quantum dot structures;Physical Review B;2018-06-19

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