Electrical properties of GaSb/InAsSb core/shell nanowires-Reference-Cited by-同舟云学术

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Electrical properties of GaSb/InAsSb core/shell nanowires

Published:2014-09-29 Issue:42 Volume:25 Page:425201
ISSN:0957-4484
Container-title:Nanotechnology
language:
Short-container-title:Nanotechnology

Author:

Ganjipour Bahram,Sepehri Sobhan,Dey Anil W,Tizno Ofogh,Mattias Borg B,Dick Kimberly A,Samuelson Lars,Wernersson Lars-Erik,Thelander Claes

Publisher

IOP Publishing

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,General Materials Science,General Chemistry,Bioengineering

Reference25 articles.

1. Evidence for Helical Edge Modes in InvertedInAs/GaSbQuantum Wells

2. Quantum Spin Hall Effect in Inverted Type-II Semiconductors

3. Type-II InAs/GaSb photodiodes and focal plane arrays aimed at high operating temperatures

4. Performance of AlGaSb/InAs TFETs With Gate Electric Field and Tunneling Direction Aligned

5. III–V Complementary Metal–Oxide–Semiconductor Electronics on Silicon Substrates

Cited by 32 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Reconfigurable signal modulation in a ferroelectric tunnel field-effect transistor;Nature Communications;2023-05-03

2. Tunable transport properties of dual-gated InAs/GaSb core/shell nanowires;Journal of Applied Physics;2023-02-27

3. Absorption Enhancement of GaAs Thin Film Solar Cell using Hemisphere Core-shell Nanoparticles;2022 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD);2022-09-12

4. Performance enhancement of GaSb vertical nanowire p-type MOSFETs on Si by rapid thermal annealing;Nanotechnology;2021-11-24

5. Review on GaAsSb nanowire potentials for future 1D heterostructures: Properties and applications;Materials Today Communications;2021-09

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