The effect of stacking fault formation on optical properties in vertically aligned ZnO nanowires-Reference-Cited by-同舟云学术

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The effect of stacking fault formation on optical properties in vertically aligned ZnO nanowires

Published:2007-06-29 Issue:30 Volume:18 Page:305701
ISSN:0957-4484
Container-title:Nanotechnology
language:
Short-container-title:Nanotechnology

Author:

Jeong Min-Chang,Lee Sang-Won,Seo Ji-Min,Myoung Jae-Min

Publisher

IOP Publishing

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,General Materials Science,General Chemistry,Bioengineering

Link

http://stacks.iop.org/0957-4484/18/i=30/a=305701/pdf

Reference23 articles.

1. High performance ZnO nanowire field effect transistors with organic gate nanodielectrics: effects of metal contacts and ozone treatment

2. ZnO-Nanowire-Inserted GaN/ZnO Heterojunction Light-Emitting Diodes

3. ZnO nanowire field-effect transistor and oxygen sensing property

4. Photocurrent in ZnO nanowires grown from Au electrodes

5. ZnO nanomaterials synthesized from thermal evaporation of ball-milled ZnO powders

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