The electrical and structural properties of n-type InAs nanowires grown from metal–organic precursors-Reference-Cited by-同舟云学术

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The electrical and structural properties of n-type InAs nanowires grown from metal–organic precursors

Published:2010-04-23 Issue:20 Volume:21 Page:205703
ISSN:0957-4484
Container-title:Nanotechnology
language:
Short-container-title:Nanotechnology

Author:

Thelander C,Dick K A,Borgström M T,Fröberg L E,Caroff P,Nilsson H A,Samuelson L

Publisher

IOP Publishing

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,General Materials Science,General Chemistry,Bioengineering

Link

http://stacks.iop.org/0957-4484/21/i=20/a=205703/pdf

Reference31 articles.

1. Nanowire-based one-dimensional electronics

2. Monolithic GaAs/InGaP nanowire light emitting diodes on silicon

3. Vertical Enhancement-Mode InAs Nanowire Field-Effect Transistor With 50-nm Wrap Gate

4. Coaxial silicon nanowires as solar cells and nanoelectronic power sources

5. InAs nanowire metal-oxide-semiconductor capacitors

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