Abstract
Abstract
Phase change memory (PCM) has been regarded as one of the most promising candidates for the next-generation nonvolatile memory. In this paper, we propose PtSb2Te (PST) phase change material for phase change memory. The doping of Pt improves the crystallization temperature and Ten-year data-retention temperature of Sb2Te to 180 °C, 192 °C, 204 °C and 117 °C,123 °C,137 °C, and refines the grain to about 10 nm. At the same time, the density change of Sb2Te film after phase transition is reduced to 4.19% due to the addition of Pt. There are no other new phases formed in PST film except hexagonal Sb2Te phase. For PST-based phase change memory cell, only 10 ns electrical pulse is required to complete the reversible operation with a Reset voltage lower than 4.3 V. At the same time, the number of cycle operations of the memory cell exceeds 105 and it has a lower resistance drift coefficient as 0.019.
Funder
Technical innovation talents of Yunnan Province
Science and Technology Innovation Team of Yunnan Province
Science and Technology Innovation Team of Kunming
technology development and research project for research institutes of Yunnan province
Genetic Engineering of Precious Metal Materials in Yunnan Province (I)-Construction and Application of Precious Metal Materials Professional Database
Subject
Metals and Alloys,Polymers and Plastics,Surfaces, Coatings and Films,Biomaterials,Electronic, Optical and Magnetic Materials
Cited by
2 articles.
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