Abstract
Abstract
Transparent (CuZn)O thin films were fabricated via electrochemical deposition at room temperature from an aqueous solution containing Zn(NO3)2 and Cu(NO3)2, and properties of the films were studied before and after annealing at 400 °C in air. According to x-ray photoelectron spectroscopy results, copper was in the Cu1+ oxidation state. All the samples before and after the annealing were found to be amorphous by x-ray diffraction, and p-type conductivity was found by photoelectrochemical characterizations. Transparent p-n heterojunction ZnO/(CuZn)O was fabricated by depositing ZnO on as-deposited and annealed (CuZn)O. For both as-deposited and annealed (CuZn)O, rectifying characteristics and photovoltaic effects were observed.
Subject
Metals and Alloys,Polymers and Plastics,Surfaces, Coatings and Films,Biomaterials,Electronic, Optical and Magnetic Materials
Cited by
1 articles.
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