Abstract
Abstract
The photocatalytic performance of a semiconductor material is significantly related to its crystalline phase, thus, crystalline phase engineering is of importance for designing the semiconductor composites fabricated between two semiconductor materials. In this work, WO3/g-C3N4 composites was taken as an example, we designed and prepared the WO3/g-C3N4 composites with different crystalline phases of WO3. The important role of the crystalline phase of WO3, which is hexagonal phase (h-WO3), monoclinic phase (m-WO3), and mixed phases of h-WO3 and m-WO3 on the morphology, photoabsorption property, charge separation efficiency, and photocatalytic activity of the WO3/g-C3N4 composites were systematically investigated. By evaluating the photocatalytic degradation of RhB, it is found that the highest photocatalytic activity was achieved by WO3/g-C3N4 with 25 wt% h-WO3 and 75% g-C3N4 (H1G3). The enhanced photocatalytic performance of H1G3 was mainly attributed to the improvement in the separation efficiency of photogenerated electron-hole pairs, which was confirmed by surface photovoltage results. Our work sheds a light on the design of composite photocatalysts based on semiconductor oxides.
Funder
National Natural Science Foundation of China
Subject
Metals and Alloys,Polymers and Plastics,Surfaces, Coatings and Films,Biomaterials,Electronic, Optical and Magnetic Materials
Cited by
5 articles.
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