Dimensional-transformation of hexagonal antimonene nanosheets through the manipulation of reduction kinetics

Author:

Sun HaibinORCID,Zheng Wenrui,Liu Congcong,Li Xiangdong,Chu Xinyu,Wang Shiran,Liu Shenghong,Xie Wenhe

Abstract

Abstract Antimonene (Sb) has been widely studied owing to its high carrier mobility, high thermal conductivity, and tunable electronic properties. Conventional synthetic methods for antimonene nanosheets (Sb-NSs) are more complex and multi-step reactions, mainly including the epitaxial growth method, mechanical peeling method, electrochemical separation method, and liquid-phase separation method. Here, we report a simple method for the synthesis of Sb-NSs on Ni foam from two-dimensional (2D) nanosheets to one-dimensional (1D) nanowires via hydrothermal method. The fabricated hexagonal Sb-NSs exhibit a transverse scale of 400 nm and a thickness of approximately 50 nm. When evaluated as anode materials for lithium storage, hexagonal Sb-NSs deliver a high reversible capacity of 870.3 mAh g−1 at 0.2 A g−1 and a reversible capacity of 375 mAh g−1 at 0.2 A g−1 after 60 cycles. As a result, the successful preparation of dimensional-switching Sb-NMs provides a new class of 2D materials for LIBs.

Funder

Scientific Research Foundation of Graduate School of XYNU

Key Scientific Research Projects of Colleges and Universities in Henan Province

National Natural Science Foundation of China

Nanhu Scholars Program for Young Scholar of XYNU

Scientific Research Foundation of University Student of XYNU

Publisher

IOP Publishing

Subject

Metals and Alloys,Polymers and Plastics,Surfaces, Coatings and Films,Biomaterials,Electronic, Optical and Magnetic Materials

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号  京ICP备18003416号-3