Optical properties and growth mechanism of rock-like structured black silicon

Abstract

Abstract In this study, rock-like black silicon is prepared by using plasma enhanced hot-wire chemical vapor deposition (PE-HWCVD). The average grain sizes of polysilicon for 10-min, 20-min and 40-min growth time was about 12.4, 14.3 and 15.5 nm, respectively. As the growth time increased, the surface morphology had more rock like structures all over the surface which can be seen in the scanning electron microscope (SEM). Growth mechanism of developing crystalline silicon is studied along with the optical property. The results showed that the PE-HWCVD silicon have low reflectivity 6.4% better than wet etch textured silicon 12.5% in the range of 400–800 nm. The black silicon has low reflectance than the wet etch textured silicon which can be perfectly used as an anti-reflective coating substance.