Effect of post-deposition annealing on the interfacial chemical bonding states and band alignment of atomic layer deposited neodymium oxide on silicon-Reference-Cited by-同舟云学术

Effect of post-deposition annealing on the interfacial chemical bonding states and band alignment of atomic layer deposited neodymium oxide on silicon

Published:2014-10-10 Issue:4 Volume:1 Page:045005
ISSN:2053-1591
Container-title:Materials Research Express
language:
Short-container-title:Mater. Res. Express

Author:

Fan Xiaojiao,Liu Hongxia,Fei Chenxi

Funder

Specialized Research Fund for the Doctoral Program of High Education

National Natural Science Foundation of China

Publisher

IOP Publishing

Subject

Metals and Alloys,Polymers and Plastics,Surfaces, Coatings and Films,Biomaterials,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/2053-1591/1/i=4/a=045005/pdf

Reference33 articles.

1. Growth and application of epitaxial heterostructures with polymorphous rare-earth oxides

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5. Physical and electrical characteristics of AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors with rare earth Er2O3 as a gate dielectric

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