Analytical modelling of quantum capacitance and carrier concentration in Archimedean zigzag SiC nanoscrolls

Abstract

Abstract Considering the ongoing miniaturization of electronic devices using new categories of nanomaterials, particular importance should be given to the quantum confinement effects in advanced fabrication processes. This paper presents a new analytical model of the quantum capacitance for zigzag silicon doped graphene nanscrolls,SiCNSs. Although, studying the electronic properties and synthesis methods of SiC-based nanostructures has drawn great research attention in recent years, no analytical model or numerical simulation for quantum capacitance and carrier concentration has been conducted concerning the SiC nanoscrolls so far. In this study, the quantum capacitance model of zigzag SiCNSs is presented for both degenerate and non-degenerate regimes considering the effects of different structural parameters. In the degenerate regime, the zigzag SiCNS shows a constant quantum capacitance value of 4.75 × 10–11 F m−1 (47.5 pF m−1) while for non-degenerate regime it follows exponential behaviour. The dominancy of the quantum capacitance of SiCNSs at different levels of concentration is compared in this study. The investigation also highlights the variations of the density of states and carrier concentration with respect to the length and chirality. Presented results suggest that synthesis of SiCNSs possesses a range of potential technological applications as supercapacitors and the channel or interconnections in transistors in the new generation of the nanodevices.