Influence of boron rich layer on quantum efficiencies inp+–n–n+Si structures during diffusion of boron spin on dopant source
Author:
Publisher
IOP Publishing
Subject
Metals and Alloys,Polymers and Plastics,Surfaces, Coatings and Films,Biomaterials,Electronic, Optical and Magnetic Materials
Link
http://iopscience.iop.org/article/10.1088/2053-1591/aaa5f1/pdf
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1. Advancements in n-Type Base Crystalline Silicon Solar Cells and Their Emergence in the Photovoltaic Industry
2. Rear emitter n-type passivated emitter, rear totally diffused silicon solar cell Structure
3. High efficiency PERT cells on n-type silicon substrates
4. P-Type Versus n-Type Silicon Wafers: Prospects for High-Efficiency Commercial Silicon Solar Cells
5. Misfit dislocations generated during non-ideal boron and phosphorus diffusion and their effect on high-efficiency silicon solar cells
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