Investigation on the structural properties of GaN films grown on La0.3Sr1.7AlTaO6substrates-Reference-Cited by-同舟云学术

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Investigation on the structural properties of GaN films grown on La0.3Sr1.7AlTaO6substrates

Published:2014-04-16 Issue:2 Volume:1 Page:025903
ISSN:2053-1591
Container-title:Materials Research Express
language:
Short-container-title:Mater. Res. Express

Author:

Wang Wenliang,Zhou Shizhong,Liu Zuolian,Yang Weijia,Lin Yunhao,Qian Huirong,Gao Fangliang,Li Guoqiang

Publisher

IOP Publishing

Subject

Metals and Alloys,Polymers and Plastics,Surfaces, Coatings and Films,Biomaterials,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/2053-1591/1/i=2/a=025903/pdf

Reference24 articles.

1. The management of stress in MOCVD-grown InGaN/GaN LED multilayer structures on Si(1 1 1) substrates

2. Assessment of transistors based on GaN on silicon substrate in view of integration with silicon technology

3. Substrates for gallium nitride epitaxy

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1. Electrospun Asymmetric Membranes as Promising Wound Dressings: A Review;Pharmaceutics;2021-01-30

2. Design and epitaxial growth of quality-enhanced crack-free GaN films on AlN/Al heterostructures and their nucleation mechanism;CrystEngComm;2018

3. Endotaxial growth of FexGe single-crystals on Ge(001) substrates;CrystEngComm;2018

4. Quality-enhanced GaN epitaxial films grown on (La, Sr) (Al, Ta)O3 substrates by pulsed laser deposition;Materials Letters;2016-04

5. Epitaxial GaN Layers: Low Temperature Growth Using Laser Molecular Beam Epitaxy Technique and Characterizations;Advances in Nanomaterials;2016

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