Abstract
Abstract
To mitigate the sensitivity of the charge pump in a traditional Phase-Locked Loop(PLL), a single-event-hardened PLL architecture with a proportional and integral path is proposed. The phase margin of the PLL is kept at 58.16° due to the rational design and the output clock frequency ranges from 0.8 to 3.2 GHz. The circuit-level simulation results reveal that the sensitive volume of the hardened PLL decreases by 80% ∼ 95%. The novel radiation-hardened PLL circuit was implemented in a 28 nm CMOS technology and irradiated with heavy ions with a linear energy transfer between 1.9 and 65.6 MeV•cm2 mg−1. The proposed radiation-hardened PLL shows one order of single-event effects hardness level higher than the conventional PLL.
Funder
National Natural Science Foundation of China
Subject
Metals and Alloys,Polymers and Plastics,Surfaces, Coatings and Films,Biomaterials,Electronic, Optical and Magnetic Materials
Cited by
2 articles.
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