Comparative study of ZnMgO/GaAs and ZnMgO/Si solar cells

Abstract

Abstract Because ZnO can be used as transparent conductive oxide or as an anti-reflective coating in the field of transparent electronics, ZnO/Si solar cells using ZnO as the emitter material have received widespread attention. Compared with Si, GaAs has a wider band gap, which makes its spectral response and solar spectrum match better than Si, so ZnO/GaAs solar cells have higher power conversion efficiency. However, during the manufacturing process of heterojunctions, it is inevitable that dangling bonds and defects will be generated at the interface, which increase the interface recombination and reduce the performance of solar cells. Based on this, in this study, three methods to reduce the interface recombination of ZnO/GaAs solar cells are proposed: doping Mg in ZnO, increasing the carrier concentration of ZnO, and reducing the interface defects between ZnO and GaAs. The results show that these three methods effectively improve the performance of ZnO/GaAs solar cells. After comparing the results with ZnMgO/Si solar cells, it is found that the performance of ZnMgO/GaAs solar cells is much higher than that of ZnMgO/Si solar cells.