Broadband antireflection sub-wavelength structure of InGaP/InGaAs/Ge triple junction solar cell with composition-graded SiNx-Reference-Cited by-同舟云学术

Broadband antireflection sub-wavelength structure of InGaP/InGaAs/Ge triple junction solar cell with composition-graded SiNx

Published:2015-05-27 Issue:5 Volume:2 Page:055505
ISSN:2053-1591
Container-title:Materials Research Express
language:
Short-container-title:Mater. Res. Express

Author:

Chung Chen-Chen,Lo Hsiao-Chieh,Lin Yen-Ku,Yu Hung-Wei,Tran Binh Tinh,Lin Kung- Liang,Chen Yung Chang,Quan Nguyen-Hong,Chang Edward Yi,Tseng Yuan-Chieh

Funder

Ministry of Science and Technology, Taiwan

Publisher

IOP Publishing

Subject

Metals and Alloys,Polymers and Plastics,Surfaces, Coatings and Films,Biomaterials,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/2053-1591/2/i=5/a=055505/pdf

Reference25 articles.

1. 40% efficient metamorphic GaInP∕GaInAs∕Ge multijunction solar cells

2. Current-matched triple-junction solar cell reaching 41.1% conversion efficiency under concentrated sunlight

3. Twenty‐four percent efficient silicon solar cells with double layer antireflection coatings and reduced resistance loss

4. Double-layer anti-reflection coating using MgF2 and CeO2 films on a crystalline silicon substrate

5. Nanostructured multilayer graded-index antireflection coating for Si solar cells with broadband and omnidirectional characteristics

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1. Efficiency improvement of GaInP solar cells by broadband omnidirectional antireflection through dielectric composite nanostructures;Solar Energy Materials and Solar Cells;2017-09

2. Evolution of a dense interlayer in a-SiNx:H thin films under 100 MeV Ni7+ ion irradiation;AIP Conference Proceedings;2017