Influence of Gd content on structural, electronic, thermoelectric, and optical properties of WO3

Abstract

Abstract WO3-based semiconductor materials are optimistic competitors for modern electronic devices because of their outstanding electronic and optical properties. Simulations on pure and Gd-doped WO3 compositions were executed using Tran and Blaha modified Becke–Johnson approximation. Experimentally, thin films of these compositions were prepared using the chemically derived technique. X-ray diffraction spectra of thin films exhibited cubic structure having space group 221-Pm-3m in all compositions. Field emission scanning electron micrographs reveal the uniform growth of thin films with rod-like compact morphology. The density of states spectra for electronic properties demonstrate the main contribution of W-d and O-p for pure WO3 with p-d hybridization while Gd containing composition provides an additional prominent contribution from f-orbital. Band structure shows an indirect transition for WO3 and band gap values were observed as 1.73 eV which decreased with increment of Gd content. A significant change in thermoelectric parameters was observed with an increment of temperature and Gd doping. The maximum value of the refractive index was observed as 3.02 in the visible energy regime and tends to decrease in Gd containing compositions. The experimentally obtained maximum dielectric constant was observed as 7.89 for pure WO3 and decreased to 4.58 for maximum Gd containing composition. Optical parameters like extinction, absorption coefficient, and optical conductivity show a sharp increment in visible energy region which make these compositions favorable for photovoltaic and optoelectronic applications. The experimentally obtained optical parameters are found in good agreement with simulated results obtained through TB-mBJ approximation.