Plasma and surface chemistry effects during high rate deposition of hydrogenated amorphous silicon
Author:
Publisher
IOP Publishing
Subject
Condensed Matter Physics,Nuclear Energy and Engineering
Link
http://stacks.iop.org/0741-3335/41/i=3A/a=030/pdf
Reference51 articles.
1. Plasma deposition of hydrogenated amorphous silicon: Studies of the growth surface
2. In situ study of the hydrogen rich overlayer at the a-Si:H surface by infrared ellipsometry
3. Hyperthermal H atom interactions with D/Si(100): Effects of incident H atom kinetic energy on the removal of adsorbed D
4. Etching, Insertion, and Abstraction Reactions of Atomic Deuterium with Amorphous Silicon Hydride Films
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1. Reconciling the Physical and Chemical Environments of Plasma: A Commentary on “Mechanisms of Plasma Polymerisation - Reviewed from a Chemical Point of View”;Plasma Processes and Polymers;2012-06-18
2. Rate equation analysis of hydrogen uptake on Si (100) surfaces;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2005-09
3. Time-resolved cavity ringdown study of the Si and SiH3 surface reaction probability during plasma deposition of a-Si:H at different substrate temperatures;Journal of Applied Physics;2004-10-15
4. In situprobing of surface hydrides on hydrogenated amorphous silicon using attenuated total reflection infrared spectroscopy;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2002-05
5. Effect of hydrogen on adsorbed precursor diffusion kinetics during hydrogenated amorphous silicon deposition;Applied Physics Letters;2002-04
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