Hard Superconducting Gap in PbTe Nanowires

Author:

Gao 高 Yichun 益淳,Song 宋 Wenyu 文玉,Yang 杨 Shuai 帅,Yu 于 Zehao 泽昊,Li 李 Ruidong 睿东,Miao 苗 Wentao 文韬,Wang 王 Yuhao 禹灏,Chen 陈 Fangting 芳婷,Geng 耿 Zuhan 祖汗,Yang 杨 Lining 利宁,Xia 夏 Zezhou 泽洲,Feng 冯 Xiao 硝,Zang 臧 Yunyi 运祎,Li 李 Lin 琳,Shang 尚 Runan 汝南,Xue 薛 Qi-Kun 其坤,He 何 Ke 珂,Zhang 张 Hao 浩

Abstract

Semiconductor nanowires coupled to a superconductor provide a powerful testbed for quantum device physics such as Majorana zero modes and gate-tunable hybrid qubits. The performance of these quantum devices heavily relies on the quality of the induced superconducting gap. A hard gap, evident as vanishing subgap conductance in tunneling spectroscopy, is both necessary and desired. A hard gap has been achieved and extensively studied before in III–V semiconductor nanowires (InAs and InSb). In this study, we present the observation of a hard superconducting gap in PbTe nanowires coupled to a superconductor Pb. The gap size Δ is ∼ 1 meV (maximally 1.3 meV in one device). Additionally, subgap Andreev bound states can also be created and controlled through gate tuning. Tuning a device into the open regime can reveal Andreev enhancement of the subgap conductance. These results pave the way for diverse superconducting quantum devices based on PbTe nanowires.

Publisher

IOP Publishing

Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. SQUID oscillations in PbTe nanowire networks;Physical Review B;2024-07-03

2. Gate-tunable subband degeneracy in semiconductor nanowires;Proceedings of the National Academy of Sciences;2024-06-27

3. Selective-Area-Grown PbTe-Pb Planar Josephson Junctions for Quantum Devices;Nano Letters;2024-04-02

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