Hydrogenic-Donor Impurity States in GaAs/Al x Ga 1− x As Quantum Dots in the Presence of an Electric Field
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/0256-307X/28/8/086201/pdf
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1. Variational calculations on a quantum well in an electric field
2. Effects of J-gate potential and uniform electric field on a coupled donor pair in Si for quantum computing
3. Effects of growth-direction electric and magnetic fields on excitons inGaAs−Ga1−xAlxAscoupled double quantum wells
4. Calculation of direct and indirect excitons inGaAs∕Ga1−xAlxAscoupled double quantum wells: The effects of in-plane magnetic fields and growth-direction electric fields
5. Controlling electric field and electron density in a double-gated GaAs/AlGaAs quantum well
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1. GaAlAs/GaAs cubical inhomogeneous quantum dot (core/shell) under external excitations: the photoionization cross-section of donor impurity with the polaronic effect;Journal of Nanophotonics;2020-01-07
2. The effect of dielectric constant on binding energy and impurity self-polarization in a GaAs–Ga1−x Al x As spherical quantum dot;Indian Journal of Physics;2016-09-09
3. Electric field effect on lowest excited-state binding energy of hydrogenic impurity in (In,Ga)N parabolic wire;Semiconductors;2016-04
4. Impurity position effects on the linear and nonlinear optical properties of the cubic quantum dot under an external electric field;Journal of Physics D: Applied Physics;2015-07-10
5. Electron in a Quantum Wire in the Presence of Parallel and Perpendicular Magnetic Fields;Applied Mechanics and Materials;2013-08-30
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