Structural and Electrical Characteristics of Pb(Zr 0.53 ,Ti 0.47 )O 3 Thin Films Deposited on Si (100) Substrates
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Reference12 articles.
1. A Silicon-Based Ferroelectric Capacitor for Memory Devices
2. Interaction ofPbTiO3Films with Si Substrate
3. Structural and electrical properties of metal-ferroelectric-insulator-semiconductor field-effect transistors using a Pt/Bi3.25La0.75Ti3O12/CeO2/Si structure
4. Growth and polarization features of highly (100) oriented Pb(Zr0.53Ti0.47)O3 films on Si with ultrathin SiO2 buffer layer
5. A New Silicon-Based Ferroelectric Sandwich Structure
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