Structural and Optical Properties of Nonpolar m-Plane GaN and GaN-Based LEDs on γ-LiAlO 2
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/0256-307X/25/7/077/pdf
Reference21 articles.
1. GaN: Processing, defects, and devices
2. Spontaneous polarization and piezoelectric constants of III-V nitrides
3. Demonstration of Nonpolarm-Plane InGaN/GaN Light-Emitting Diodes on Free-Standingm-Plane GaN Substrates
4. Crystal growth and properties of LiAlO2 and nonpolar GaN on LiAlO2 substrate
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1. Enhancement of Magnetic Properties and High-Frequency Inductance in the Bi-Layered FeN-FeNHf Thin Films;Journal of Superconductivity and Novel Magnetism;2021-10-15
2. Planar Waveguides in γ-LiAlO2 With Ion Implantation: Light Being Facilely Propagated;Journal of Lightwave Technology;2017-01-01
3. Epitaxial growth of group III-nitride films by pulsed laser deposition and their use in the development of LED devices;Surface Science Reports;2015-11
4. First-principles calculation of the structural, electronic, dynamical and thermodynamic properties of γ-LiAlO2;International Journal of Hydrogen Energy;2015-03
5. Epitaxial growth of GaN films on unconventional oxide substrates;J. Mater. Chem. C;2014
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