Effect of Si/Si 1- y C y /Si Barriers on the Characteristics of Si 1- x Ge x /Si Resonant Tunneling Structures
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/0256-307X/17/11/023/pdf
Reference16 articles.
1. Silicon-based semiconductor heterostructures: column IV bandgap engineering
2. Silicon-based optoelectronics
3. Band Alignment inSi1−yCy/Si(001)andSi1−xGex/Si1−yCy/Si(001)Quantum Wells by Photoluminescence under Applied [100] and [110] Uniaxial Stress
4. Photoluminescence of strained Si1−yCy alloys grown at low temperature
5. Band gap and band alignment of strain reduced Si/Si1−x−yGexCy multiple quantum well structures obtained by photoluminescence measurements
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1. A Small Signal Equivalent Circuit Model for Resonant Tunnelling Diode;Chinese Physics Letters;2006-07-21
2. Hole conduction characteristics of strained Si1−xGex/Si resonant tunneling diode;Physica E: Low-dimensional Systems and Nanostructures;2002-02
3. Fabrication of Nanoparticle Pattern Through Atomic Force Microscopy Tip-Induced Deposition on Modified Silicon Surfaces;Chinese Physics Letters;2001-12-19
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