Au/Ti/p-Diamond Ohmic Contacts Prepared by Radio-Frequency Sputtering
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/0256-307X/17/11/017/pdf
Reference7 articles.
1. The electrical properties and device applications of homoepitaxial and polycrystalline diamond films
2. The potential of diamond and SiC electronic devices for microwave and millimeter-wave power applications
3. Carrier transport mechanism of Ohmic contact to p-type diamond
4. A review of the electrical characteristics of metal contacts on diamond
5. A thermally activated solid state reaction process for fabricating ohmic contacts to semiconducting diamond
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1. Mechanisms of current flow in metal-semiconductor ohmic contacts;Semiconductors;2007-11
2. Preparation of p-n Junction Diode by B-Doped Diamond Film Grown on Si-Doped c-BN;Chinese Physics Letters;2002-10
3. Twin Diamond Crystals Grown at High Temperature and High Pressure from the Fe-Ni-C System;Chinese Physics Letters;2002-08-22
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