Low-Threshold-Current and High-out-Power 660 nm Laser Diodes with a p-GaAs Current Blocking Layer for DVD-RAM/R
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Reference22 articles.
1. Local mirror temperatures of red‐emitting (Al)GaInP quantum‐well laser diodes by Raman scattering and reflectance modulation measurements
2. Reduction in Operating Current of High-Power 660 nm Laser Diodes Using a Transparent AlGaAs Cap Layer
3. Highly reliable 60/spl deg/C 50-mW operation of 650-nm band window-mirror laser diodes
4. Continuous-wave high-power (75 mW) operation of a transverse-mode stabilised window-structure 680 nm AlGaInP visible laser diode
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Effects of the substrate misorientation on the structural and optoelectronic characteristics of tensile GaInP quantum well laser diode wafer;Journal of Alloys and Compounds;2016-12
2. The method of the boundary diffraction wave for impedance surfaces;Optics Communications;2012-03
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