A New Bipolar Type Transistor Created Based on Interface Effects of Integrated All Perovskite Oxides-Reference-Cited by-同舟云学术

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A New Bipolar Type Transistor Created Based on Interface Effects of Integrated All Perovskite Oxides

Published:2012-10 Issue:10 Volume:29 Page:107402
ISSN:0256-307X
Container-title:Chinese Physics Letters
language:
Short-container-title:Chinese Phys. Lett.

Author:

Xia Feng-Jin,Wu Hao,Fu Yue-Ju,Xu Bo,Yuan Jie,Zhu Bei-Yi,Qiu Xiang-Gang,Cao Li-Xin,Li Jun-Jie,Jin Ai-Zi,Wang Yu-Mei,Li Fang-Hua,Liu Bao-Ting,Xie Zhong,Zhao Bai-Ru

Publisher

IOP Publishing

Subject

General Physics and Astronomy

Link

https://iopscience.iop.org/article/10.1088/0256-307X/29/10/107402/pdf

Reference28 articles.

1. A ferroelectric field effect device

2. Ferroelectric Field Effect Transistor Based on Epitaxial Perovskite Heterostructures

3. Influence of electric fields on pinning in YBa_{2}Cu_{3}O_{7-δ} films

4. Deep modulation of conductance in Ag/PLZT/LSCO ferroelectric field-effect transistor

5. A heteroepitaxial perovskite metal-base transistor

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1. Interface construction for charge transportation of ZnO/graphene multilayer films;Functional Materials Letters;2021-08

2. Interfaces in La1.89Ce0.11CuO4/Ba0.5Sr0.5TiO3/La0.88Sr0.12MnO3heterostructures on (0 0 1) SrTiO3substrates;Philosophical Magazine Letters;2014-03-27

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