Polarization Switching Induced Decrease of Bulk Resistivity in Ferroelectric Pb(Zr 0.45 Ti 0.55 )O 3 Thin Films and a Method to Improve Their Fatigue Endurance-Reference-Cited by-同舟云学术

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Polarization Switching Induced Decrease of Bulk Resistivity in Ferroelectric Pb(Zr 0.45 Ti 0.55 )O 3 Thin Films and a Method to Improve Their Fatigue Endurance

Published:2013-12 Issue:12 Volume:30 Page:127702
ISSN:0256-307X
Container-title:Chinese Physics Letters
language:
Short-container-title:Chinese Phys. Lett.

Author:

Zhu Hui,Chu Da-Ping

Publisher

IOP Publishing

Subject

General Physics and Astronomy

Link

https://iopscience.iop.org/article/10.1088/0256-307X/30/12/127702/pdf

Reference25 articles.

1. Ferroelectric Memories

2. Review of Emerging New Solid-State Non-Volatile Memories

3. An Electronic Structure of Ferroelectric PbZr 0.5 Ti 0.5 O 3

4. Mechanism of the Curie-Weiss Law in Ferroelectrics

5. Polarization Fatigue in Ferroelectric Thin Films

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A Back-Gated Ferroelectric Field-Effect Transistor with an Al-Doped Zinc Oxide Channel;Chinese Physics Letters;2015-02

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