P-BN/n-Si Heterojunction Prepared by Beryllium ion Implantation
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/0256-307X/25/1/060/pdf
Reference31 articles.
1. High pressure synthesis of semiconducting Be‐doped polycrystalline cubic boron nitride and its electrical properties
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4. Recent Advances in Cubic Boron Nitride Deposition
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