Deep InP Gratings for Opto-Electronic Devices Etched by Cl 2 /CH 4 /Ar Inductively Coupled Plasma-Reference-Cited by-同舟云学术

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Deep InP Gratings for Opto-Electronic Devices Etched by Cl 2 /CH 4 /Ar Inductively Coupled Plasma

Published:2006-07-21 Issue:8 Volume:23 Page:2158-2160
ISSN:0256-307X
Container-title:Chinese Physics Letters
language:
Short-container-title:Chinese Phys. Lett.

Author:

Jian Wang,Jian-Bai Tian,Bing Xiong,Chang-Zheng Sun,Zhi-Biao Hao,Yi Luo

Publisher

IOP Publishing

Subject

General Physics and Astronomy

Reference10 articles.

1. High-speed (>40 GHz) integrated electroabsorption modulator based on identical epitaxial layer approach

2. Low-loss InP-based photonic-crystal waveguides etched with Ar/Cl[sub 2] chemically assisted ion beam etching

3. Effect of inert gas additive species on Cl2 high density plasma etching of compound semiconductors

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Study of the ICP etching process on InGaAs/InP array devices;SPIE Proceedings;2014-11-20

2. Gas chopping etching process for InP based nanostructures with high aspect ratios;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2012-11

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