High Concentration InGaN/GaN Multi-Quantum Well Solar Cells with a Peak Open-Circuit Voltage of 2.45 V
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/0256-307X/29/6/068801/pdf
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Atomic-Scale Insights into the Interfacial Polarization Effect in the InGaN/GaN Heterostructure for Solar Cells;ACS Applied Materials & Interfaces;2022-12-12
2. Strain field tuning the electronic and magnetic properties of semihydrogenated two-bilayer GaN nanosheets;Acta Physica Sinica;2016
3. High-Power High-Efficiency Laser Power Transmission at 100 m Using Optimized Multi-Cell GaAs Converter;Chinese Physics Letters;2014-10
4. Photovoltaics literature survey (No. 97);Progress in Photovoltaics: Research and Applications;2012-10-18
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